Dielectric Function of Native Oxide on Ion-Implanted GaAs
نویسندگان
چکیده
منابع مشابه
Ion implanted dielectric elastomer circuits
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Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 atoms/cm [1,2]. Experimentally it has b...
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Ion-implantation-induced extended defect formation and annealing processes have been studied in GaAs. Mg, Be, Si, Ge, and Sn ions were implanted between 40 and 185 keV over the dose range of 1 X 10t3-1 X 1015/cm2. Furnace annealing after capping with S&N4 was performed between 700 and 900 “C for times between 5 min and 10 h. Plan-view and crosssectional transmission electron microscopy results ...
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Measuring with a spectroscopic ellipsometer (SE) in the 1.845 eV photon energy region we determined the complex dielectric function (E = e1 + ieZ> of different kinds of amorphous silicon prepared by self-implantation and thermal relaxation (500 “C, 3 h) . These measurements show that the complex dielectric function (and thus the complex refractive index) of implanted a-Si (i-a-Si) differs from ...
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We present the design, fabrication process and characterization of multilayer miniaturized polydimethylsiloxane (PDMS)-based dielectric elastomer diaphragm actuators. The conductive stretchable electrodes are obtained by lowenergy metal ion implantation. To increase force, decrease the required voltage, and avoid dielectric breakdown, we present here a technique to fabricate multilayer devices ...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 2013
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.123.956